<$.m.l-con.du.ctoi lpi , line. 20 stern ave. springfield, new jersey 07081 2SC1509 silicon npn epitaxial planer type telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 for low-frequency driver amplification complementary to 2sa777 ? features ? high collector to emitter voltage vce<> ? optimum for the driver stage of a low-frequency and 25 to 30w output amplifier. absolute maximum ratings (ta=25c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol vcbo vceo vebo icp ic pc tj ts,e ratings 80 80 5 1 0.5 1 150 -55- +150 unit v v v a a w ?c 'c unit: mm 4.9to.2 l:emitter 2:collector 3:base eiaj:sc-51 to-92l package electrical characteristics (ta=25c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance symbol icbo vcbo vceo vebo w nfe2 vce(set) vbe(sal) fr cob conditions vcb = 20v, ie = 0 ic=10ua, ie = 0 ic=100ua, ib = 0 ie = loua, ic = 0 vce= 10v, ic= 150ma*2 vce = 5v, ic = 500ma*2 ic = 300ma, ib = 30ma*2 ic = 300ma, ib = 30ma*2 vcb = 10v, ie = -50ma, f = 100mhz vcb=10v, ie = 0, f= 1mhz min 80 80 5 130 50 typ 100 0.2 0.85 120 11 max 0.1 330 0.4 1.2 20 unit ua v v v v v mhz pf 2 pulse measurement *'hfe1 rank classification rank nfel r 130-220 s 185-330 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
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